6T SRAM Cell: Design And Analysis

SRAM has become a major component in many VLSI Chips due to their large storage density and small access time. SRAM has become the topic of substantial research due to the rapid development for low power, low voltage memory design during recent years due to increase demand for notebooks, laptops, IC memory cards and hand held communication devices. SRAMs are widely used for mobile applications as both on chip and offchip memories, because of their ease of use and low standby leakage. The main objective of this paper is evaluating performance in terms of Power consumption, delay and SNM of existing 6T CMOS SRAM cell in 45nm and 180nm technology.