论文信息 - GaAs Integrated Laser And Electronic Circuit Technology

GaAs Integrated Laser And Electronic Circuit Technology

The integration technology of a ridge AlGaAs/GaAs waveguide laser grown by MOCVD and of a microelectronic circuit is described in two different configurations: a selective and a non-selective laser layers growth. The critical steps of the respective processes are then compared.

[1] D. Kasemset,et al. GaAs/GaAlAs selective MOCVD epitaxy and planar ion-implantation technique for complex integrated optoelectronic circuit applications , 1984, IEEE Electron Device Letters.

[2] S. Sasaki,et al. GaAs optoelectronic integrated light sources , 1983 .

[3] R. Azoulay,et al. Low threshold and low dispersion MOCVD/LPE buried-heterostructure GaAs/GaAlAs lasers , 1984 .

[4] Osamu Wada,et al. AlGaAs/GaAs multiquantum-well (MQW) laser applied to monolithic integration with FET driver , 1983 .

[5] Kenya Nakai,et al. Monolithic integration of a pin photodiode and a field‐effect transistor using a new fabrication technique—graded step process , 1985 .

[6] Kam Y. Lau,et al. Very high frequency GaAlAs laser field‐effect transistor monolithic integrated circuit , 1982 .