2 V-operation pseudomorphic power HEMT with 62% power-added efficiency for cellular phones

We demonstrate maximum power-added efficiency of 62% with a 2-V drain bias at L-band frequencies on a pseudomorphic high electron mobility transistor (PHEMT) for use in analog cellular phones. This PHEMT is fabricated by advanced power-device technology featuring a GaAs-InGaAs-GaAs PHEMT structure with a low-temperature process and gate-stress compensation. Power performance evaluated under the Japanese standards for 1.5-GHz personal digital cellular phones (PDC) exhibits a very high power-added efficiency of 51% (54%) with an output power of 0.8 W (1.7 W) at a 2-V (3-V) drain bias. The adjacent-channel leakage is 50 dBc at 1.5 GHz +/-50 KHz when tested at this output power. These results indicate that the proposed PHEMT power device is highly suitable for use in analog and digital cellular phone systems.<<ETX>>

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