SIRAD : an irradiation facility at the LNL Tandem accelerator for radiation damage studies on semiconductor detectors and electronic devices and systems

This article describes the essential features of the SIRAD facility of the INFN Laboratori Nazionali di Legnaro. This facility, located at the 15 MV Tandem accelerator, is dedicated to radiation damage studies (bulk damage, total dose and Single Event Effects) induced by protons and heavy ions on semiconductor detectors, electronic devices and systems. SIRAD is at present routinely used by groups involved in detector development for elementary particle physics, in electronic device physics and in space applications. # 2001 Elsevier Science B.V. All rights reserved. PACS: 29.27.Ac; 29.40.Wk; 41.85.Qg; 61.80.Jh

[1]  Gabriella Ghidini,et al.  Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electrons or X-ray irradiation , 1999, 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).

[2]  D. Bisello,et al.  Radiation damage of oxygenated silicon diodes by 27 MeV protons , 1999 .

[3]  G. Vizkelethy,et al.  A new approach to nuclear microscopy: the ion–electron emission microscope , 1998 .

[4]  D. Bisello,et al.  Effects of heavy ion impact on power diodes , 1999, 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).

[5]  Michael Moll,et al.  Relation between microscopic defects and macroscopic changes in silicon detector properties after hadron irradiation , 2002 .

[6]  D. Bisello,et al.  Radiation damage of standard and oxygenated silicon diodes by 16 and 27 MeV protons , 2000, 2000 IEEE Nuclear Science Symposium. Conference Record (Cat. No.00CH37149).

[7]  D. Bisello,et al.  Single event upset studies on the APV6 front end readout chip , 1999 .