Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition
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R. Dupuis | J. Limb | F. Ponce | A. Fischer | J. Ryou | D. Yoo | Z. Lochner | Jianping Liu | Zhihao Wu
[1] R. Dupuis,et al. Nitride-Based Green Light-Emitting Diodes With Various p-Type Layers , 2007, Journal of Display Technology.
[2] R. Dupuis,et al. Comparison of GaN and In0.04Ga0.96N p-Layers on the Electrical and Electroluminescence Properties of Green Light Emitting Diodes , 2007 .
[3] Wonseok Lee,et al. Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes , 2006 .
[4] Xian-An Cao,et al. Microstructural origin of leakage current in GaN/InGaN light-emitting diodes , 2004 .
[5] James S. Speck,et al. Dislocation mediated surface morphology of GaN , 1999 .
[6] Isamu Akasaki,et al. Pit formation in GaInN quantum wells , 1998 .
[7] James S. Speck,et al. STRUCTURAL ORIGIN OF V-DEFECTS AND CORRELATION WITH LOCALIZED EXCITONIC CENTERS IN INGAN/GAN MULTIPLE QUANTUM WELLS , 1998 .
[8] R. Howie,et al. Crystal growth , 1982, Nature.