Theory of Modern Electronic Semiconductor Devices

PREFACE. 1 OVERVIEW OF SEMICONDUCTOR DEVICE TRENDS. 1.1 Moore's Law and Its Implications. 1.2 Semiconductor Devices for Telecommunications. 1.3 Digital Communications. 2 SEMICONDUCTOR HETEROSTRUCTURES. 2.1 Formation of Heterostructures. 2.2 Modulation Doping. 2.3 Two-Dimensional Subband Transport at Heterointerfaces. 2.4 Strain and Stress at Heterointerfaces. 2.5 Perpendicular Transport in Heterostructures and Superlattices. 2.6 Heterojunction Materials Systems: Intrinsic and Extrinsic Properties. Problems. 3 HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS. 3.1 Motivation. 3.2 Basics of Heterostructure Field-Effect Transistors. 3.3 Simplified Long-Channel Model of a MODFET. 3.4 Physical Features of Advanced State-of-the-Art MODFETs. 3.5 High-Frequency Performance of MODFETs. 3.6 Materials Properties and Structure Optimization for HFETs. Problems. 4 HETEROSTRUCTURE BIPOLAR TRANSISTORS. 4.1 Review of Bipolar Junction Transistors. 4.2 Emitter-Base Heterojunction Bipolar Transistors. 4.3 Base Transport Dynamics. 4.4 Nonstationary Transport Effects and Breakdown. 4.5 High-Frequency Performance of HBTs. 4.6 Materials Properties and Structure Optimization for HBTs . Problems. 5 TRANSFERRED ELECTRON EFFECTS, NEGATIVE DIFFERENTIAL RESISTANCE, AND DEVICES. 5.1 Introduction. 5.2 k-Space Transfer. 5.3 Real-Space Transfer. 5.4 Consequences of NDR in a Semiconductor. 5.5 Transferred Electron-Effect Oscillators: Gunn Diodes. 5.6 Negative Differential Resistance Transistors. 5.7 IMPATT Diodes. Problems. 6 RESONANT TUNNELING AND DEVICES. 6.1 Physics of Resonant Tunneling: Qualitative Approach. 6.2 Physics of Resonant Tunneling: Envelope Approximation. 6.3 Inelastic Phonon Scattering Assisted Tunneling: Hopping Conduction. 6.4 Resonant Tunneling Diodes: High-Frequency Applications. 6.5 Resonant Tunneling Diodes: Digital Applications. 6.6 Resonant Tunneling Transistors. Problems. 7 CMOS: DEVICES AND FUTURE CHALLENGES. 7.1 Why CMOS? 7.2 Basics of Long-Channel MOSFET Operation. 7.3 Short-Channel Effects. 7.4 Scaling Theory. 7.5 Processing Limitations to Continued Miniaturization. Problems. 8 BEYOND CMOS: FUTURE APPROACHES TO COMPUTING HARDWARE. 8.1 Alternative MOS Device Structures: SOI, Dual-Gate FETs, and SiGe. 8.2 Quantum-Dot Devices and Cellular Automata. 8.3 Molecular Computing. 8.4 Field-Programmable Gate Arrays and Defect-Tolerant Computing. 8.5 Coulomb Blockade and Single-Electron Transistors. 8.6 Quantum Computing. Problems. 9 MAGNETIC FIELD EFFECTS IN SEMICONDUCTORS. 9.1 Landau Levels. 9.2 Classical Hall Effect. 9.3 Integer Quantum Hall Effect. 9.4 Fractional Quantum Hall Effect. 9.5 Shubnikov-de Haas Oscillations. Problems. REFERENCES. APPENDIX A: PHYSICAL CONSTANTS. APPENDIX B: BULK MATERIAL PARAMETERS. Table I: Silicon. Table II: Ge. Table III: GaAs. Table IV: InP. Table V: InAs. Table VI: InN. Table VII: GaN. Table VIII: SiC. Table IX: ZnS. Table X: ZnSe. Table XI : Al x Ga 1 fx As. Table XI I : Ga 0:47 In 0:53 As. Table XIII: Al 0:48 In 0:52 As. Table XI V: Ga 0:5 In 0:5 P. Table XV: Hg 0:70 Cd 0:30 Te. APPENDIX C: HETEROJUNCTION PROPERTIES. INDEX.

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