Low-energy error correction of NAND Flash memory through soft-decision decoding

The raw bit error rate of NAND Flash memory increases as the semiconductor geometry shrinks for high density, which makes it very necessary to employ a very strong error correction circuit. The soft-decision-based error correction algorithms, such as low-density parity-check (LDPC) codes, can enhance the error correction capability without increasing the number of parity bits. However, soft-decision error correction schemes need multiple precision data, which obviously increases the energy consumption in NAND Flash memory for more sensing operations as well as more data output. We examine the energy consumption of a NAND Flash memory system with an LDPC code-based soft-decision error correction algorithm. The energy consumed at multiple-precision NAND Flash memory as well as the LDPC decoder is considered. The output precision employed is 1.0, 1.4, 1.7, and 2.0 bits per data. In addition, we also propose an LDPC decoder-assisted precision selection method that needs virtually no overhead. The experiment was conducted with 32-nm 128-Gbit 2-bit multi-level cell NAND Flash memory and a 65-nm LDPC decoding VLSI.

[1]  A. Visconti,et al.  Random Telegraph Noise Effect on the Programmed Threshold-Voltage Distribution of Flash Memories , 2009, IEEE Electron Device Letters.

[2]  Wonyong Sung,et al.  Rate-0.96 LDPC Decoding VLSI for Soft-Decision Error Correction of NAND Flash Memory , 2014, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[3]  Qiuju Diao,et al.  Cyclic and Quasi-Cyclic LDPC Codes on Constrained Parity-Check Matrices and Their Trapping Sets , 2012, IEEE Transactions on Information Theory.

[4]  Tong Zhang,et al.  Estimating Information-Theoretical nand Flash Memory Storage Capacity and its Implication to Memory System Design Space Exploration , 2012, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[5]  Wim Dehaene,et al.  Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness , 2011, Microelectron. Reliab..

[6]  Shekhar Y. Borkar,et al.  Design challenges of technology scaling , 1999, IEEE Micro.

[7]  Wonyong Sung,et al.  Performance of rate 0.96 (68254, 65536) EG-LDPC code for NAND Flash memory error correction , 2012, 2012 IEEE International Conference on Communications (ICC).

[8]  Zhongfeng Wang,et al.  Error correction for multi-level NAND flash memory using Reed-Solomon codes , 2008, 2008 IEEE Workshop on Signal Processing Systems.

[9]  Robert G. Gallager,et al.  Low-density parity-check codes , 1962, IRE Trans. Inf. Theory.

[10]  Wonyong Sung,et al.  Estimation of NAND Flash Memory Threshold Voltage Distribution for Optimum Soft-Decision Error Correction , 2013, IEEE Transactions on Signal Processing.

[11]  Ajay Dholakia,et al.  Reduced-complexity decoding of LDPC codes , 2005, IEEE Transactions on Communications.

[12]  Shu Lin,et al.  Low-density parity-check codes based on finite geometries: A rediscovery and new results , 2001, IEEE Trans. Inf. Theory.

[13]  Tong Zhang,et al.  Using Data Postcompensation and Predistortion to Tolerate Cell-to-Cell Interference in MLC nand Flash Memory , 2010, IEEE Transactions on Circuits and Systems I: Regular Papers.

[14]  Jungdal Choi,et al.  Effects of floating-gate interference on NAND flash memory cell operation , 2002 .

[15]  Tong Zhang,et al.  On the Use of Soft-Decision Error-Correction Codes in nand Flash Memory , 2011, IEEE Transactions on Circuits and Systems I: Regular Papers.

[16]  Wei Liu,et al.  Low-Power High-Throughput BCH Error Correction VLSI Design for Multi-Level Cell NAND Flash Memories , 2006, 2006 IEEE Workshop on Signal Processing Systems Design and Implementation.

[17]  Young-Ho Lim,et al.  A 3.3 V 32 Mb NAND flash memory with incremental step pulse programming scheme , 1995 .

[18]  David J. C. MacKay,et al.  Good Error-Correcting Codes Based on Very Sparse Matrices , 1997, IEEE Trans. Inf. Theory.

[19]  K. Prall Scaling Non-Volatile Memory Below 30nm , 2007, 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop.