论文信息 - Observation of optical Stark effect in InGaAs/InP multiple quantum wells

Observation of optical Stark effect in InGaAs/InP multiple quantum wells

We report an experimental observation of a blue shift in the n=1 heavy‐hole exciton line of In0.53Ga0.47As/InP multiple quantum wells resulting from a picosecond photoexcitation in the transparent spectral region. The temporal response of this shift follows the excitation and it is attributed to the optical Stark effect. The shift was measured to be 0.19 meV for an incident light with a photon energy 20 meV below the exciton peak and with a 10‐MW/cm2 intensity.

J. Hegarty | W. Tsang | K. Tai

[1] J. Hegarty,et al. Nonlinear spectroscopy in In0.53Ga0.47As/InP multiple quantum wells , 1987 .

[2] 1.55‐μm optical logic étalon with picojoule switching energy made of InGaAs/InP multiple quantum wells , 1987 .

[3] Chemla,et al. Collective excitations and the dynamical Stark effect in a coherently driven exciton system. , 1986, Physical review letters.

[4] D. Chemla,et al. Optical Stark effect on excitons in GaAs quantum wells. , 1986, Optics letters.

[5] Nasser N Peyghambarian,et al. Ultrafast all-optical gate with subpicosecond on and off response time , 1986 .

[6] W. Tsang,et al. Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy , 1986 .

[7] Antonetti,et al. "Dressed excitons" in a multiple-quantum-well structure: Evidence for an optical Stark effect with femtosecond response time. , 1986, Physical review letters.

[8] A. Lehmen,et al. Two‐wavelength absorption modulation spectroscopy of bandtail absorption in GaAs quantum wells , 1986 .

[9] W. Tsang. Chemical beam epitaxy of InP and GaAs , 1984 .