Chemical junction delineation of a specific site in Si devices.

Junction delineation of a specific site in Si devices was carried out by chemical etching with transmission electron microscopy specimens prepared by the microsampling method. The results showed that the two-dimensional dopant profile of n + metal-oxide-semiconductor in the specific site can be delineated down to a level of ∼2.7×10 1 7 cm - 3 with the etchant of HF: HNO 3 = 1.5: 200. This demonstrates that chemical delineation coupled with the microsampling method is very useful for the failure analysis of a junction in a specific site.