论文信息 - Effects of implantation temperature and ion flux on damage accumulation in Al-implanted 4H-SiC - 字舞流文

Effects of implantation temperature and ion flux on damage accumulation in Al-implanted 4H-SiC

W. J. Weber | A. Hallén | Chong-Min Wang | G. Possnert | Yanwen Zhang | W. Jiang | Weilin Jiang | W. J. Weber