Multi-Channel Field-Effect Transistor (MCFET)—Part I: Electrical Performance and Current Gain Analysis

Multi-Channel Field-Effect Transistor (MCFET) structures with ultralow IOFF (16 pA/mum) and high ION (N: 2.27 mA/mum and P: 1.32 mA/mum) currents are obtained on silicon on insulator (SOI) with a high-kappa/metal gate stack, satisfying both low-standby-power and high-performance requirements. The experimental current gain of the MCFET structure is compared with that of an optimized planar FD-SOI reference with the same high-kappa/metal gate stack and is quantitatively explained by an analytical model. Transport properties are investigated, and the specific MCFET electrostatic properties are evidenced, in particular a higher VDsat for MCFETs compared with the planar reference. Finally, through 3-D numerical simulations correlated with specific characterizations, the influence of the channel width on the electrical performance is analyzed. For narrow devices, the parasitic bottom channel increases the total drain current of the MCFET structure without degrading the electrostatic integrity.

[1]  X. Garros,et al.  Comparative Scalability of PVD and CVD TiN on HfO2 as a Metal Gate Stack for FDSOI cMOSFETs down to 25nm Gate Length and Width , 2006, 2006 International Electron Devices Meeting.

[2]  T. Skotnicki,et al.  SON (silicon on nothing)-a new device architecture for the ULSI era , 1999, 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).

[3]  O. Rozeau,et al.  First Internal Spacers' Introduction in Record High $I_{\rm ON}/I_{\rm OFF}\ \hbox{TiN/HfO}_{2}$ Gate Multichannel MOSFET Satisfying Both High-Performance and Low Standby Power Requirements , 2009, IEEE Electron Device Letters.

[4]  X. Garros,et al.  75 nm damascene metal gate and high-k integration for advanced CMOS devices , 2002, Digest. International Electron Devices Meeting,.

[5]  Chang Woo Oh,et al.  A novel sub-50 nm multi-bridge-channel MOSFET (MBCFET) with extremely high performance , 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

[6]  O. Faynot,et al.  Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack , 2006, 2006 International Electron Devices Meeting.

[7]  D. Robbins,et al.  Evolution of surface morphology and strain during SiGe epitaxy , 1992 .

[8]  F. Andrieu,et al.  3D stacked channels: how series resistances can limit 3D devices performance , 2007, 2007 IEEE International SOI Conference.

[9]  X. Garros,et al.  Multi-Channel Field-Effect Transistor (MCFET)—Part II: Analysis of Gate Stack and Series Resistance Influence on the MCFET Performance , 2009, IEEE Transactions on Electron Devices.

[10]  M. Jurczak,et al.  Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs , 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

[11]  S.C. Rustagi,et al.  Vertically Stacked SiGe Nanowire Array Channel CMOS Transistors , 2007, IEEE Electron Device Letters.

[12]  Mansun Chan,et al.  A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation , 1997 .

[13]  Sung Min Kim,et al.  122 Mb High Speed SRAM Cell with 25 nm Gate Length Multi-Bridge-Channel MOSFET (MBCFET) on Bulk Si Substrate , 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

[14]  Donggun Park,et al.  Sub-25nm single-metal gate CMOS multi-bridge-channel MOSFET (MBCFET) for high performance and low power application , 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

[15]  Kinam Kim,et al.  A novel multibridge-channel MOSFET (MBCFET): fabrication technologies and characteristics , 2003 .

[16]  Thomas Ernst,et al.  Growth of SiGe/Si superlattices on silicon-on-insulator substrates for multi-bridge channel field effect transistors , 2005 .

[17]  Christian Arvet,et al.  Isotropic etching of SiGe alloys with high selectivity to similar materials , 2004 .

[18]  F. Andrieu,et al.  Novel integration process and performances analysis of Low STandby Power (LSTP) 3D multi-channel CMOSFET (MCFET) on SOI with metal / high-K gate stack , 2008, 2008 Symposium on VLSI Technology.

[19]  M. Haond,et al.  First 80 nm SON (Silicon-On-Nothing) MOSFETs with perfect morphology and high electrical performance , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[20]  G. Ghibaudo,et al.  Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling , 2006, 2006 International Electron Devices Meeting.

[21]  D. Delille,et al.  Highly performant double gate MOSFET realized with SON process , 2003, IEEE International Electron Devices Meeting 2003.

[22]  Thomas Ernst,et al.  Hydrogen annealing of arrays of planar and vertically stacked Si nanowires , 2007 .

[23]  D. Dutartre,et al.  Defect-free Stranski-Krastanov growth of strained Si1-xGex layers on Si , 1994 .

[24]  Gerard Ghibaudo,et al.  New method for the extraction of MOSFET parameters , 1988 .

[25]  T. Skotnicki,et al.  50 nm-Gate All Around (GAA)-Silicon On Nothing (SON)-devices: a simple way to co-integration of GAA transistors within bulk MOSFET process , 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

[26]  T. Skotnicki,et al.  High-Performance High-$K$/Metal Planar Self-Aligned Gate-All-Around CMOS Devices , 2008, IEEE Transactions on Nanotechnology.

[27]  G. Ghibaudo,et al.  Improved split C-V method for effective mobility extraction in sub-0.1-/spl mu/m Si MOSFETs , 2004, IEEE Electron Device Letters.

[28]  Simon Deleonibus,et al.  Oxidation of Suspended Stacked Silicon Nanowire for Sub-10nm Cross-Section Shape Optimization , 2008 .

[29]  O. Faynot,et al.  15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET , 2008, 2008 IEEE International Electron Devices Meeting.

[30]  O. Faynot,et al.  Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films , 2007 .