论文信息 - Picosecond InP optoelectronic switches

Picosecond InP optoelectronic switches

Proton bombardment is used to increase the response speed of InP optoelectronic switches. Photoconductivity measurements indicate response times following bombardment of <100 ps, with the electron mobility estimated to be ⩾600 cm2/Vs. This mobility is over an order of magnitude larger than that observed in similar high‐resistivity devices of comparable speed fabricated in germanium or silicon‐on‐sapphire.

F. J. Leonberger | R. C. Williamson | A. G. Foyt | F. Leonberger | A. Foyt

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