Buried selectively etchable microstructures in GaAs using deep nitrogen implantation

Abstract Results are presented for deep implantation of nitrogen into n-type GaAs. The main purpose of these investigations is to clarify whether deep implantation can be a suitable process to create buried, selectively etchable layers for the fabrication of micromechanical structures in GaAs. The implanted layers have been characterized by XPS sputter profiling and electrical measurements using test Schottky diodes as well as selected etching techniques. XPS depth profiling shows the formation of a GaAs1-x N y layer with y 5%. The current/voltage characteristics show that implantation damage recovers to a certain extend after annealing at a temperature of 750°C.