Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD) and hybrid techniques, are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible (i) to simulate accurately temperature and deposition distributions, as well as doping (ii) to quantify the limiting phenomena, (iii) to understand the important role of different precursors in CVD and hydrogen additions in PVT. The first conclusion of this paper is the importance of the “effective” C/Si ratio during CVD epitaxy in hot-wall reactors and its capability to explain the doping concentrations. The second conclusion is the influence of the C/Si ratio in alternative bulk growth technique involving gas additions. Preliminary results show that fine tuning of H2 or precursor additions allow a better control of concentrations of residual and intentional doping.

[1]  M. Masi,et al.  Gas‐Phase and Surface Kinetics of Epitaxial Silicon Carbide Growth Involving Chlorine‐Containing Species , 2006 .

[2]  M. Skowronski,et al.  Effects of hydrogen on the properties of SiC crystals grown by physical vapor transport: Thermodynamic considerations and experimental results , 2006 .

[3]  M. Skowronski,et al.  Growth kinetics study in halide chemical vapor deposition of SiC , 2005 .

[4]  M. Ucar,et al.  Control of the Supersaturation in the CF-PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications , 2005 .

[5]  M. Pons,et al.  Numerical Analysis of Growth Condition on SiC-CVD in the Horizontal Hot-Wall Reactor , 2005 .

[6]  K. Kojima,et al.  Modeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor , 2005 .

[7]  A. Winnacker,et al.  SiC single crystal growth by a modified physical vapor transport technique , 2005 .

[8]  M. Pons,et al.  Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept , 2004 .

[9]  W. Bahng,et al.  High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment , 2004 .

[10]  D. Chaussende,et al.  Continuous Feed Physical Vapor Transport Toward High Purity and Long Boule Growth of SiC , 2003 .

[11]  A. Ellison,et al.  HTCVD Grown Semi-Insulating SiC Substrates , 2003 .

[12]  A. Henry,et al.  Aluminum doping of epitaxial silicon carbide , 2003 .

[13]  K. Kojima,et al.  Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by Low-Pressure Hot-Wall Chemical Vapor Deposition , 2003 .

[14]  E. Janzén,et al.  Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition , 2003 .

[15]  A. Henry,et al.  Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers , 2002 .

[16]  Y. Makarov,et al.  Numerical study of SiC CVD in a vertical cold-wall reactor , 2002 .

[17]  Tatsuo Fujimoto,et al.  Growth of large high-quality SiC single crystals , 2002 .

[18]  A. Winnacker,et al.  Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method , 2002 .

[19]  J. Palmour,et al.  Progress in the industrial production of SiC substrates for semiconductor devices , 2001 .

[20]  A. Winnacker,et al.  Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation , 1999 .

[21]  D. J. Larkin.  SiC Dopant Incorporation Control Using Site‐Competition CVD , 1997 .

[22]  H. Matsunami,et al.  Incorporation mechanism of N, Al, and B impurities in chemical vapor deposition of SiC , 1995 .

[23]  M. Pons,et al.  Numerical modeling of SiC-CVD in a horizontal hot-wall reactor , 2006 .

[24]  C. Hallin,et al.  Modeling of Silicon Carbide Epitaxial Growth in Hot‐Wall Chemical Vapor Deposition Processes , 2000 .