A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5
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[1] N. Mott,et al. Electronic Processes In Non-Crystalline Materials , 1940 .
[2] A. Owen,et al. Electronic conduction and switching in chalcogenide glasses , 1973 .
[3] D. Adler,et al. Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors , 1976 .
[4] A. Pirovano,et al. Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials , 2004, IEEE Transactions on Electron Devices.
[5] A. Pirovano,et al. Electronic switching in phase-change memories , 2004, IEEE Transactions on Electron Devices.
[6] A. Pirovano,et al. Parasitic reset in the programming transient of PCMs , 2005, IEEE Electron Device Letters.
[7] D. Ielmini,et al. Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories , 2007, IEEE Transactions on Electron Devices.
[8] I. Karpov,et al. Fundamental drift of parameters in chalcogenide phase change memory , 2007 .
[9] A. Pirovano,et al. Threshold switching and phase transition numerical models for phase change memory simulations , 2008 .
[10] A. Pirovano,et al. A Reliable Technique for Experimental Evaluation of Crystallization Activation Energy in PCMs , 2008, IEEE Electron Device Letters.