β-Ga2O3-Based Photodiode Performances Investigation: Simulation Study

Recently, researcher's communities have concentrated on ultra-wide bandgap (UWBG) semiconductor-based materials with relatively wide band gaps ∼5eV. These materials have remarkable structural, optical and physical properties, for instance Gallium Oxide (GaO) and its phases present the most advantageous characteristics such as wide band gap (Eg), high electrons mobility, interesting recombination life-time value and thermal stability in β-phase. In this work, a simulation of photodiode based on β-Ga2O3 semiconductor with Top contacts configuration was carried out using SILVACO TCAD software. Indeed, structural and optical aspects such as thickness, electrodes materials and illumination variation were investigated in terms of device electric performances. The obtained results denote a good agreement with precedent works relative to this field.