High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping
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N. Bourzgui | A. Ougazzaden | G. Patriarche | A. Telia | A. Soltani | M. Rousseau | A. Benmoussa | P. Bonanno | J. Gerbedoen | M. Mattalah