论文信息 - Topographic characterization of AFM-grown SiO2 on si

Topographic characterization of AFM-grown SiO2 on si

In order to establish whether atomic force microscope (AFM) grown SiO2 is appropriate for use as a gate oxide in nanoelectronics, a characterization of these films needs to be performed. In this paper results on AFM fabrication and topographical characterization of large-area SiO2 patterns are presented. This paper is centred around the SiO2 surface and SiO2-Si interface roughness, due to its importance in relation to the quality of ultrathin dielectrics. Our results show quite similar values to those obtained for thermal oxides and thus we suggest that AFM-grown SiO2 is a suitable candidate for gate oxide applications in nanodevices.

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