论文信息 - Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum - 字舞流文

Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum

E. Janzén | M. Syväjärvi | R. Yakimova | A. Lebedev | N. Savkina | A. Tregubova | M. Shcheglov | D. Davydov | E. Janzén

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