Research and Progress of VDMOS Field-Effect Transistor

The general situation and working principle of VDMOS Field-Effect Transistor are introduced.The features and advantages of this new generation of power electronics devices are presented. The theory and technology breakthroughs of the VDMOS Field-Effect Transistor in recent years are concluded, which focus on low voltage and high voltage power MOSFETs. The excellent performance is realized by the advanced trench and package technology, and the limit line of silicon for high voltage have been broken through the using of a new structure named Superjunction and a new SiC material. In the end, the VDMOS development and prospect are explored.