Transferred-electron oscillators at very high frequencies
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The high-frequency characteristics of transferred-electron oscillators have been examined by computer simulation. Maximum frequencies in the range 100 to 200 GHz (for GaAs) and contact effects favouring current saturating cathodes are predicted.
[1] K. W. Gray,et al. Current limiting contacts for InP transferred electron devices , 1975 .
[2] Herbert Kroemer,et al. Hot-electron relaxation effects in devices☆ , 1978 .
[3] F. B. Fank,et al. High efficiency 90 GHz InP Gunn oscillators , 1980 .
[4] B. Ridley. Anatomy of the transferred‐electron effect in III‐V semiconductors , 1977 .
[5] M. Shur,et al. Ballistic electron motion in GaAs at room temperature , 1980 .