First-Principle Study on Piezoresistance Effect in Silicon Nanowires

In this study, we have simulated the piezoresistance effect in bulk silicon and silicon nanowires (SiNWs) based on the first-principle calculations of model structures. The band structure changes according to stress was observed o the SiNWs model. The piezoresistance coefficients with respect to cross-sectional area of 50 nm SiNW together with SEM image of the model were presented.