Performance in R.F. power MOSFET's amplifier for GSM radiotelephony

With advantages like good power gain, high input impedance and thermal stability, power MOSFET's working in the GSM radiotelephony UHF channel become more and more serious challengers of bipolar transistors in power amplification domain. Our paper aims to present a model that allows general circuit simulators to deal as well with the study of this kind of devices as with the design of RF power amplifiers or power electronics circuits.

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