Interaction between monolithically integrated JI-LIGBTs under clamped inductive switching

Due to the increasing demand for multi-functionality in power integrated circuits, consideration must be given as to how multiple, adjacent, monolithically integrated, high voltage lateral power devices interact with each other when operated independently of one another. For the first time, we demonstrate through extensive experiments and simulations that the breakdown, on-state, switching and safe operating area performance of LIGBT are all significantly affected by the operating conditions of an adjacent LIGBT in junction isolation technology.

[1]  M. Sweet,et al.  A fast switching segmented anode NPN controlled LIGBT , 2003, IEEE Electron Device Letters.

[2]  Bantval J. Baliga,et al.  Interaction between monolithic, junction-isolated lateral insulated-gate bipolar transistors , 1991 .

[3]  E.M.S. Narayanan,et al.  A novel multi-channel approach to improve LIGBT performance , 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.

[4]  H. Funaki,et al.  Multi-channel SOI lateral IGBTs with large SOA , 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.