论文信息 - Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors - 字舞流文

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

P. Kotula | A. Allerman | F. Ren | S. Pearton | A. Baca | R. Kaplar | A. Armstrong | E. Douglas | B. Klein | P. Carey