Thin-Film Si:H-Based Solar Cells

Recent developments in the photovoltaic (PV) industry, driven by a shortage of solar grade Si feedstock to grow Si wafers or ribbons, have stimulated a strong renewed interest in thin-film technologies and in particular in solar cells based on protocrystalline hydrogenated amorphous silicon (a-Si:H) or nanocrystalline/microcrystalline (nc/μc)-Si:H. There are a number of institutions around the world developing protocrystalline thin-film Si:H technologies as well as those based on tandem and triple junction cells consisting of a-Si:H, a-Si:Ge:H and nc/μc-Si:H. There are also several large commercial companies actively marketing large production-scale plasma-enhanced chemical vapor deposition (PECVD) deposition equipment for the production of such modules. Reduction in the cost of the modules can be achieved by increasing their stabilized efficiencies and the deposition rates of the Si:H materials. In this paper, recent results are presented which provide insights into the nature of protocrystalline Si:H materials, optimization of cell structures and their light-induced degradation that are helpful in addressing these issues. The activities in these areas that are being carried out in the United States are also briefly reviewed.

[1]  H. Fujiwara,et al.  Real time spectroscopic ellipsometry for characterization and optimization of amorphous silicon-based solar cell structures , 1998 .

[2]  Joshua M. Pearce,et al.  Protocrystalline Si:H p-type Layers for Maximization of the Open Circuit Voltage in a-Si:H n-i-p Solar Cells , 2002 .

[3]  Tsai,et al.  Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study. , 1985, Physical review. B, Condensed matter.

[4]  R. Collins,et al.  Evolution of Metastable Defects in Intrinsic Layers of A-Si:H Solar Cells and Corresponding Thin Film Materials Characterized by Carrier Recombination Through Midgap States , 2006, 2006 IEEE 4th World Conference on Photovoltaic Energy Conference.

[5]  R. Collins,et al.  Phase engineering of a-Si:H solar cells for optimized performance , 2004 .

[6]  R. Collins,et al.  Real time analysis of amorphous and microcrystalline silicon film growth by multichannel ellipsometry , 2000 .

[7]  R. Collins,et al.  Characterization of the Evolution in Metastable Defects Created by Recombination of Carriers Generated by Photo-generation and Injection in p-i-n a-Si:H Solar Cells , 2006 .

[8]  D. Staebler,et al.  Reversible conductivity changes in discharge‐produced amorphous Si , 1977 .

[9]  Liyou Yang,et al.  The Effect of H 2 Dilution on the Stability of a-Si:H based Solar Cells , 1994 .

[10]  Joshua M. Pearce,et al.  Light Induced Defect Creation Kinetics in Thin Film Protocrystalline Silicon Materials and Their Solar Cells , 2002 .

[11]  Hiroyuki Fujiwara,et al.  Optimization of hydrogenated amorphous silicon p–i–n solar cells with two-step i layers guided by real-time spectroscopic ellipsometry , 1998 .

[12]  Y. Hamakawa Recent Progress of Amorphous Silicon Solar Cell Technology , 1985 .

[13]  Bernd Rech,et al.  Intrinsic microcrystalline silicon: A new material for photovoltaics , 2000 .

[14]  Subhendu Guha,et al.  Enhancement of open circuit voltage in high efficiency amorphous silicon alloy solar cells , 1986 .