Semiconductor switches based pulse power generator for plasma source ion implantation is proposed in this study. The pulse generator consists of six IGBT stacks and a step-up pulse transformer. To increase the current rating of the pulse generator, three six IGBT stacks are used in parallel and to increase voltage rating of the pulse generator, twelve IGBTs are used in the stack. Each IGBT stack composed of twelve IGBTs has only two active drivers and eleven passive drivers (are composed of passive components such as resistors, capacitors, and diodes). Two active drivers are located in the groundside, which ensures low insulation requirement for the controller. The proposed pulse generator can generate the pulse voltage with the following parameters: voltage - 10/spl sim/60 kV; rising time - 1 /spl mu/s; pulse width - 2 /spl sim/ 6 /spl mu/s with 1 /spl mu/s size; pulse repetition rate - 2000 pps. The proposed pulse power generator uses only semiconductor switches with only two active drivers. So this system structure gives a semiinfinite lifetime, compactness and high efficiency.
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