论文信息 - Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE - 字舞流文

Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE

M. Albrecht | J. Schwarzkopf | A. Fiedler | W. Miller | K. Irmscher | Z. Galazka | S. Bin Anooz | M. Albrecht | R. Schewski | C. Wouters | A. Popp | R. Grüneberg | S. B. Anooz | T. Chou