15-nm Base Type-II InP/GaAsSb/InP DHBTs With GHz and a 6-V BV

Type-II InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) with a 15-nm base were fabricated by contact lithography: m emitter devices feature GHz GHz and BV V. This is the highest ever reported for InP/GaAsSb DHBTs, and an "all-technology" record BV product of 2304 GHz V. This result is credited to the favor- able scaling of InP/GaAsSb/InP DHBT breakdown voltages BV in thin collector structures. Index Terms—Breakdown voltage (BV), cutoff frequencies, double het- erojunction bipolar transistors (DHBTs), GaAsSb, GaInAs, heterojunction bipolar transistors (HBTs), InP.

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