Impact of ion implantation statistics on V/sub T/ fluctuations in MOSFETs: comparison between decaborane and boron channel implants
暂无分享,去创建一个
P. Stolk | H. Tuinhout | F. Widdershoven | P. Bancken | J. Schmitz | J. Politiek | B. Dirks | K. van der Tak
[1] P. Stolk,et al. Modeling statistical dopant fluctuations in MOS transistors , 1998 .
[2] A. Asenov. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 /spl mu/m MOSFET's: A 3-D "atomistic" simulation study , 1998 .
[3] A.H. Montree,et al. Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors , 1997, International Electron Devices Meeting. IEDM Technical Digest.
[4] A. Toriumi,et al. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's , 1994 .