论文信息 - Deep donor state of vanadium in cubic silicon carbide (3C‐SiC)

Deep donor state of vanadium in cubic silicon carbide (3C‐SiC)

Electron spin resonance (ESR) of silicon‐substitutional vanadium in its neutral V4+Si (3d1) state has been observed in cubic bulk 3C‐SiC single crystals. By photo‐ESR the position of the (0/+) deep donor level of vanadium could be located at EV+1.7 eV. Using this level as common reference in 3C‐SiC and 6H‐SiC, the valence‐band discontinuity in the 3C‐SiC/6H‐SiC interface is predicted as ΔEV=0.1 eV, with the valence band of 3C‐SiC lying lower in energy. We also offer an explanation for the absence of intra‐3d‐shell infrared luminescence of V4+ (3d1) in 3C‐SiC.

[1] V. Heine,et al. Structural and electronic properties of SiC polytypes , 1993 .

[2] M. Spencer,et al. Near‐equilibrium growth of thick, high quality beta‐SiC by sublimation , 1993 .

[3] Heinrich,et al. Deep-level impurities: A possible guide to prediction of band-edge discontinuities in semiconductor heterojunctions. , 1985, Physical review letters.

[4] J. Schneider,et al. Electron spin resonance studies of transition metal deep level impurities in SiC , 1992 .

[5] R. Stein,et al. Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide , 1990 .

[6] J. Schneider,et al. Point defects in silicon carbide , 1993 .

[7] K. Maier,et al. Transition Metals in Silicon Carbide (SiC): Vanadium and Titanium , 1992 .

[8] B. Ridley. The photoionisation cross section of deep-level impurities in semiconductors , 1980 .