论文信息 - Very low threshold current AlGaInp/GaxIn1−xP strained single quantum well visible laser diode

Very low threshold current AlGaInp/GaxIn1−xP strained single quantum well visible laser diode

The successful operation of a separate confinement heterostructure (SCH) AlGaInP/Ga x In 1−x P (x=0.43) strained single quantum well (SSQW) laser has been achieved for the first time. A threshold current of 18 mA at 25°C, the lowest value ever reported for AlGaInP/GaInP lasers, was obtained by a 10 × 200 μm index guided laser diode at an emission wavelength of 691 nm

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