2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment
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[1] David Tyndall,et al. Time-Domain Fluorescence Lifetime Imaging Techniques Suitable for Solid-State Imaging Sensor Arrays , 2012, Sensors.
[2] Ekert,et al. Quantum cryptography based on Bell's theorem. , 1991, Physical review letters.
[3] Frank Scholze,et al. Robust UV/VUV/EUV PureB Photodiode Detector Technology With High CMOS Compatibility , 2014, IEEE Journal of Selected Topics in Quantum Electronics.
[4] K. Ng,et al. The Physics of Semiconductor Devices , 2019, Springer Proceedings in Physics.
[5] P.-A. Besse,et al. Design and characterization of a CMOS 3-D image sensor based on single photon avalanche diodes , 2005, IEEE Journal of Solid-State Circuits.
[6] Vivek K Goyal,et al. Photon-efficient imaging with a single-photon camera , 2016, Nature Communications.
[7] Tom K Lewellen,et al. Recent developments in PET detector technology , 2008, Physics in medicine and biology.
[8] W. Oldham,et al. Triggering phenomena in avalanche diodes , 1972 .
[9] T. Suligoj,et al. Examination of the InP/InGaAs single-photon avalanche diodes by establishing a new TCAD-based simulation environment , 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
[10] D. Shaver,et al. Design Considerations for 1.06-$mu$m InGaAsP–InP Geiger-Mode Avalanche Photodiodes , 2006, IEEE Journal of Quantum Electronics.
[11] Ivan B. Djordjevic,et al. Deep-Space Optical Communications: Future Perspectives and Applications , 2011, Proceedings of the IEEE.
[12] L. Nanver,et al. Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection , 2010, 2010 International Electron Devices Meeting.
[13] Gilles Brassard,et al. Quantum cryptography: Public key distribution and coin tossing , 2014, Theor. Comput. Sci..
[14] Antonino Ingargiola,et al. Optical crosstalk in single photon avalanche diode arrays: a new complete model. , 2008, Optics express.
[15] Lei Shi,et al. Electrical and Optical Performance Investigation of Si-Based Ultrashallow-Junction $\hbox{p}^{+}\hbox{-}\hbox{n}$ VUV/EUV Photodiodes , 2012, IEEE Transactions on Instrumentation and Measurement.
[16] S. Sze,et al. Physics of Semiconductor Devices: Sze/Physics , 2006 .
[17] Francesco Sarubbi,et al. High Effective Gummel Number of CVD Boron Layers in Ultrashallow $\hbox{p}^{+}\hbox{n}$ Diode Configurations , 2010, IEEE Transactions on Electron Devices.
[18] R. A. Logan,et al. Effect of Degenerate Semiconductor Band Structure on Current-Voltage Characteristics of Silicon Tunnel Diodes , 1963 .
[19] A. Lacaita,et al. Trapping phenomena in avalanche photodiodes on nanosecond scale , 1991, IEEE Electron Device Letters.
[20] A. Lacaita,et al. Avalanche photodiodes and quenching circuits for single-photon detection. , 1996, Applied optics.
[21] G. Hurkx. On the modelling of tunnelling currents in reverse-biased p-n junctions , 1989 .
[22] E. Kane. Theory of Tunneling , 1961 .
[23] Isaac L. Chuang,et al. Quantum Computation and Quantum Information (10th Anniversary edition) , 2011 .
[24] Edoardo Charbon,et al. SPAD imagers for super resolution localization microscopy enable analysis of fast fluorophore blinking , 2017, Scientific Reports.
[25] M. Rudan,et al. Modeling electron and hole transport with full-band structure effects by means of the Spherical-Harmonics Expansion of the BTE , 1998 .
[26] Robert K. Henderson,et al. A TCAD and Spectroscopy Study of Dark Count Mechanisms in Single-Photon Avalanche Diodes , 2013, IEEE Transactions on Electron Devices.
[27] R. V. Overstraeten,et al. Measurement of the ionization rates in diffused silicon p-n junctions , 1970 .