A W-Band single-ended downconversion/upconversion gate mixer in InP HEMT technology

This paper presents an initial design of a single-ended gate mixer in self-developed InP High Electron Mobility Transistor (HEMT) technology and its critical parameters measured from 75 GHz to 110 GHz. This mixer realizes a fair conversion loss between 8 dB to 14 dB in full W-Band both in up and down conversion mode, and a 1-dB input compression points more than 0 dBm with the LO pumped at 89 GHz or 94 GHz. All measurement results above are illustrated and analyzed briefly. In a conclusion, it demonstrates the potentials and possibilities to develop passive mixers in W-Band with this process in more complicated structures.

[1]  C. S. Aitchison,et al.  Analysis and Design of MESFET Gate Mixers , 1987 .

[2]  Arnulf Leuther,et al.  A G-band (140 - 220 GHz) microstrip MMIC mixer operating in both resistive and drain-pumped mode , 2008, 2008 IEEE MTT-S International Microwave Symposium Digest.

[3]  P. Kangaslahti,et al.  Resistive HEMT mixers for 60-GHz broad-band telecommunication , 2005, IEEE Transactions on Microwave Theory and Techniques.

[4]  Zhong Yinghui,et al.  Sub 100 nm In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT with fT=204 GHz, fmax=352 GHz, and gm, max=918 mS/mm , 2011, 2011 IEEE International Symposium on Radio-Frequency Integration Technology.

[5]  Jin-Koo Rhee,et al.  94 GHz MMIC single balanced mixer for FMCW radar sensor application , 2012, Proceedings of 2012 5th Global Symposium on Millimeter-Waves.

[6]  A. Leuther,et al.  A 220 GHz (G-Band) Microstrip MMIC Single-Ended Resistive Mixer , 2008, IEEE Microwave and Wireless Components Letters.