论文信息 - Total-Ionizing-Dose Response of MoS2 Transistors With ZrO2 and h-BN Gate Dielectrics - 字舞流文

Total-Ionizing-Dose Response of MoS2 Transistors With ZrO2 and h-BN Gate Dielectrics

peixiong zhao | E. Zhang | D. Fleetwood | S. Pantelides | A. O’Hara | Adithi Krishnaprasad | D. Dev | T. Roy | R. Jiang | Pan Wang | Hirokjyoti Kalita