P-Channel HfO2 Nanocrystal Flash Memory

In this paper, we have explored the memory effect on the performance of the p-channel HfO2 nanocrystal trapping layer of SONOS-type flash memories. Band to Band hot electron injection and channel hot hole was employed for programming and erasing, respectively. The proposed p-channel SONOS-type HfO2 nanocrystal flash memory exhibits large memory windows, high program/erase speed, good endurance, and good disturbance characteristics.

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