A new approach for physical-based modelling of bipolar power semiconductor devices
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[1] William Bickford,et al. A first course in the finite element method , 1990 .
[2] Stephen J. Finney,et al. A review of IGBT models , 2000 .
[3] A. Monti,et al. Temperature effects on trench-gate IGBTs , 2001, Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248).
[4] Francesco Iannuzzo,et al. Lumped charge PSPICE model for high-voltage IGBTs , 2000, Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129).
[5] Holger Goebel,et al. A unified method for modeling semiconductor power devices , 1993 .
[6] D. Metzner,et al. A modular concept for the circuit simulation of bipolar power semiconductors , 1994 .
[7] A. Carvalho,et al. Power p-i-n diode modeling using SPICE , 1997, ISIE '97 Proceeding of the IEEE International Symposium on Industrial Electronics.
[8] Antonio G. M. Strollo,et al. A new IGBT circuit model for SPICE simulation , 1997, PESC97. Record 28th Annual IEEE Power Electronics Specialists Conference. Formerly Power Conditioning Specialists Conference 1970-71. Power Processing and Electronic Specialists Conference 1972.
[9] A. R. Hefner. An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT) , 1989, 20th Annual IEEE Power Electronics Specialists Conference.
[10] Jerry L. Hudgins,et al. Circuit simulator models for the diode and IGBT with full temperature dependent features , 2001, 2001 IEEE 32nd Annual Power Electronics Specialists Conference (IEEE Cat. No.01CH37230).
[11] R. Kraus,et al. Physics-based models of power semiconductor devices for the circuit simulator SPICE , 1998, PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference (Cat. No.98CH36196).
[12] Jerry L. Hudgins,et al. Circuit simulator models for the diode and IGBT with full temperature dependent features , 2003 .
[13] A. Araújo. Modelação de semicondutores bipolares : formulação de um novo método para simulação em circuitos electrónicos de potência , 1998 .
[14] Hans Jurgen Mattausch,et al. Status and trends of power semiconductor device models for circuit simulation , 1998 .
[15] A. R. Hefner,et al. An experimentally verified IGBT model implemented in the Saber circuit simulator , 1991 .
[16] Adriano Carvalho,et al. A New Physics Based SPICE Sub-circuit Model for Insulated Gate Bipolar Transistors (IGBTs) , 2003 .
[17] R. Chibante,et al. A new physics based SPICE model for NPT IGBTs , 2003, IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468).
[18] J. Massol. Représentation des phénomenes de diffusion dans la modélisation des composants bipolaires de puissance : Application à la simulation du recouvrement inverse de la diode , 1993 .