Unified regional fermi-potential-based compact model for double heterostructure HEMTs

Triangular quantum-well (QW) based high electron mobility transistors (HEMTs) and their compact models have been extensively studied in the past. InGaAs-based double heterostructure HEMTs with rectangular-QW confinement are garnering much interest recently. The coupled Poisson-Schrödinger (PS) studies show that triangular-QW compact models are inconsistent with the double heterostructure physics. This paper presents a complete physics-based unified regional Fermi-potential (E<sub>f</sub>) model for rectangular QW devices. The E<sub>f</sub> along with the derived interface potential solution (E<sub>if</sub>) are used to capture the complete device electrostatics. The paper also discusses the modeling of I<sub>d</sub>-V<sub>d</sub> and I<sub>d</sub>-V<sub>g</sub> characteristics of the device from the Fermi potential.

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