Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications

Integration of photonic devices on silicon (Si) substrates is a key method in enabling large scale manufacturing of Si-based photonic–electronic circuits for next generation systems with high performance, small form factor, low power consumption, and low cost. Germanium (Ge) is a promising material due to its pseudo-direct bandgap and its compatibility with Si-CMOS processing. In this article, we present our recent progress on achieving high quality germanium-on-silicon (Ge/Si) materials. Subsequently, the performance of various functional devices such as photodetectors, lasers, waveguides, and sensors that are fabricated on the Ge/Si platform are discussed. Some possible future works such as the incorporation of tin (Sn) into Ge will be proposed. Finally, some applications based on a fully monolithic integrated photonic–electronic chip on an Si platform will be highlighted at the end of this article.

[1]  M. Yamaguchi,et al.  Numerical analysis for high‐efficiency GaAs solar cells fabricated on Si substrates , 1989 .

[2]  Thomas A. Langdo,et al.  Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing , 1998 .

[3]  Y. Nishi,et al.  High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts , 2008, IEEE Electron Device Letters.

[4]  S. Sze.  Semiconductor Devices: Physics and Technology , 1985 .

[5]  J. Hoyt,et al.  Characterization of dark current in Ge-on-Si photodiodes , 2012 .

[6]  Cary Gunn,et al.  CMOS Photonics for High-Speed Interconnects , 2006, IEEE Micro.

[7]  M. Suzuki,et al.  A GaAs 16-kbit static RAM using dislocation-free crystal , 1986, IEEE Transactions on Electron Devices.

[8]  H. Känel,et al.  Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells , 2006 .

[9]  M. Berroth,et al.  Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz , 2009, IEEE Photonics Technology Letters.

[10]  Jurgen Michel,et al.  Direct-gap optical gain of Ge on Si at room temperature. , 2009, Optics letters.

[11]  S.K. Banerjee,et al.  Effectiveness of SiGe Buffer Layers in Reducing Dark Currents of Ge-on-Si Photodetectors , 2007, IEEE Journal of Quantum Electronics.

[12]  A. Grill,et al.  High-speed Germanium-on-SOI lateral PIN photodiodes , 2004, IEEE Photonics Technology Letters.

[13]  Horst Zimmermann,et al.  Integrated Silicon Optoelectronics , 2010 .

[14]  Lorenzo Pavesi,et al.  Optical interconnects : the silicon approach , 2006 .

[15]  Chuan Seng Tan,et al.  Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition , 2012 .

[16]  Kazumi Wada,et al.  High-quality Ge epilayers on Si with low threading-dislocation densities , 1999 .

[17]  P. Crozat,et al.  42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide. , 2009, Optics express.

[18]  J. Faist,et al.  Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ and biaxial (001) stress , 2017 .

[19]  James S. Harris,et al.  Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy , 2011 .

[20]  Jurgen Michel,et al.  High performance, waveguide integrated Ge photodetectors. , 2007, Optics express.

[21]  Jiho Joo,et al.  36-GHz High-Responsivity Ge Photodetectors Grown by RPCVD , 2009, IEEE Photonics Technology Letters.

[22]  Boris Mizaikoff,et al.  Toward On-Chip Mid-Infrared Sensors. , 2016, Analytical chemistry.

[23]  L. Vivien,et al.  Handbook of Silicon Photonics , 2013 .

[24]  Minghui Hong,et al.  Drive-Current Enhancement in Ge n-Channel MOSFET Using Laser Annealing for Source/Drain Activation , 2006, IEEE Electron Device Letters.

[25]  R. Soref.  Mid-infrared photonics in silicon and germanium , 2010 .

[26]  C. O. Chui,et al.  Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality , 2004 .

[27]  M. Romagnoli,et al.  An electrically pumped germanium laser. , 2012, Optics express.

[28]  Erich Kasper,et al.  Electrically pumped lasing from Ge Fabry-Perot resonators on Si. , 2015, Optics express.

[29]  H. Zimmermann,et al.  Zero-bias 40Gbit/s germanium waveguide photodetector on silicon. , 2012, Optics express.

[30]  Stefan Zollner,et al.  Optical critical points of thin-film Ge 1-y Sn y alloys: A comparative Ge 1-y Sn y /Ge 1-x Si x study , 2006 .

[31]  Kathleen Richardson,et al.  Fabrication and testing of planar chalcogenide waveguide integrated microfluidic sensor. , 2007, Optics express.

[32]  Jifeng Liu.  Monolithically Integrated Ge-on-Si Active Photonics , 2014 .

[33]  C. S. Tan,et al.  Erratum to: Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut , 2013, Journal of Electronic Materials.

[34]  Milos Nedeljkovic,et al.  Surface-Grating-Coupled Low-Loss Ge-on-Si Rib Waveguides and Multimode Interferometers , 2015, IEEE Photonics Technology Letters.

[35]  Isabelle Sagnes,et al.  All‐Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities , 2015 .

[36]  Yuan Taur,et al.  Fundamentals of Modern VLSI Devices , 1998 .

[37]  C. S. Tan,et al.  Enhanced Si–Ge interdiffusion in high phosphorus-doped germanium on silicon , 2015 .

[38]  K. Saraswat,et al.  Strain-induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-tunable Band Profiles , 2022 .

[39]  Ming Lu,et al.  Metal-semiconductor-metal ion-implanted Si waveguide photodetectors for C-band operation. , 2014, Optics express.

[40]  B. Jalali,et al.  Silicon Photonics , 2006, Journal of Lightwave Technology.

[41]  Richard A. Soref,et al.  Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics , 2016 .

[42]  A. Lochtefeld,et al.  Study of the defect elimination mechanisms in aspect ratio trapping Ge growth , 2007 .

[43]  V. Reboud,et al.  Germanium based photonic components toward a full silicon/germanium photonic platform , 2017 .

[44]  P. Greiling,et al.  The Historical Development of GaAs FET Digital IC Technology , 1984 .

[45]  Bernhard Jakoby,et al.  Photonics in the Mid-Infrared: Challenges in Single-Chip Integration and Absorption Sensing , 2017, IEEE Journal of Selected Topics in Quantum Electronics.

[46]  Y. Vlasov,et al.  Losses in single-mode silicon-on-insulator strip waveguides and bends. , 2004, Optics express.

[47]  Chuan Seng Tan,et al.  Integration of III–V materials and Si-CMOS through double layer transfer process , 2014, 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).

[48]  R. Newman.  Optical Studies of Injected Carriers. II. Recombination Radiation in Germanium , 1953 .

[49]  Guo-Qiang Lo,et al.  Evanescent-Coupled Ge p-i-n Photodetectors on Si-Waveguide With SEG-Ge and Comparative Study of Lateral and Vertical p-i-n Configurations , 2008, IEEE Electron Device Letters.

[50]  Chuan Seng Tan,et al.  Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer , 2014 .

[51]  J. R. Haynes.  New Radiation Resulting from Recombination of Holes and Electrons in Germanium , 1955 .

[52]  H. Thacker,et al.  Ultralow-loss, high-density SOI optical waveguide routing for macrochip interconnects. , 2012, Optics express.

[53]  C. S. Tan,et al.  Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber , 2013 .

[54]  L. C. Kimerling,et al.  Photonics and electronics with germanium , 2015 .

[55]  Dimitri A. Antoniadis,et al.  High quality Ge on Si by epitaxial necking , 2000 .

[56]  Richard A. Soref,et al.  Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructures , 1993 .

[57]  Kazumi Wada,et al.  Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates , 2000 .

[58]  S. Komiyama,et al.  Evidence for induced far‐infrared emission from p‐Ge in crossed electric and magnetic fields , 1985 .

[59]  Yuji Yamamoto,et al.  Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach , 2013 .

[60]  H.-S.P. Wong,et al.  Electrical characterization of germanium p-channel MOSFETs , 2003, IEEE Electron Device Letters.

[61]  Soon Fatt Yoon,et al.  Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer , 2016 .

[62]  J. Faist,et al.  Lasing in direct-bandgap GeSn alloy grown on Si , 2015, Nature Photonics.

[63]  Boris Mizaikoff,et al.  On-chip integrated mid-infrared GaAs/AlGaAs Mach-Zehnder interferometer. , 2013, Analytical chemistry.

[64]  Kazumi Wada,et al.  High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform , 2005 .

[65]  Qiming Wang,et al.  High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical Interconnection , 2013, IEEE Transactions on Electron Devices.

[66]  R. Soref,et al.  The Past, Present, and Future of Silicon Photonics , 2006, IEEE Journal of Selected Topics in Quantum Electronics.

[67]  David A. B. Miller,et al.  Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition , 2011 .

[68]  A. Lochtefeld,et al.  (Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS , 2010 .

[69]  G.E. Moore,et al.  Cramming More Components Onto Integrated Circuits , 1998, Proceedings of the IEEE.

[70]  D. Kwong,et al.  In situ doping of GedxSi1−x with arsenic by rapid thermal processing chemical vapor deposition , 1992 .

[71]  Alwyn J. Seeds,et al.  Semiconductor III–V lasers monolithically grown on Si substrates , 2012 .

[72]  Rebecca J. Anthony,et al.  High-efficiency silicon nanocrystal light-emitting devices. , 2011, Nano letters.

[73]  David J. Lockwood,et al.  Silicon Photonics: CMOS Going Optical [Scanning the Issue] , 2009 .

[74]  Gianlorenzo Masini,et al.  Ge on Si p-i-n photodiodes operating at 10Gbit∕s , 2006 .

[75]  Randolph Kirchain,et al.  A roadmap for nanophotonics , 2007 .

[76]  S. Luryi,et al.  New infrared detector on a silicon chip , 1984, IEEE Transactions on Electron Devices.

[77]  Y. Yeo,et al.  Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer , 2016 .

[78]  Richard A. Soref,et al.  Silicon waveguided components for the long-wave infrared regionThis article was submitted to the spe , 2006 .

[79]  Paul Crozat,et al.  High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications [Invited] , 2013 .

[80]  L. Kimerling,et al.  Photonics and Electronics with Germanium: Wada/Photonics and Electronics with Germanium , 2015 .

[81]  M. Myronov,et al.  Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates , 2010 .

[82]  Chikara Amano,et al.  Efficiency calculations of thin‐film GaAs solar cells on Si substrates , 1985 .

[83]  N. Feng,et al.  High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide , 2009 .

[84]  R. Truche,et al.  Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates , 2010 .

[85]  Normal incidence p–i–n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition , 2010 .

[86]  Nahum Izhaky,et al.  High-speed optical modulation based on carrier depletion in a silicon waveguide. , 2007, Optics express.

[87]  D. D. Cannon,et al.  Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications , 2005 .

[88]  Raymond Woo,et al.  P-Channel Germanium FinFET Based on Rapid Melt Growth , 2007, IEEE Electron Device Letters.

[89]  L. Sekaric,et al.  Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator. , 2007, Optics express.

[90]  M. Geis,et al.  Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response. , 2009, Optics express.

[91]  S. Mantl,et al.  Si–Ge–Sn alloys: From growth to applications , 2016 .

[92]  Chuan Seng Tan,et al.  Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process , 2016 .

[93]  G. Fishman,et al.  Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism , 2010 .

[94]  Kang L. Wang,et al.  High-quality Ge films on Si substrates using Sb surfactant-mediated graded SiGe buffers , 2001 .

[95]  Jurgen Michel,et al.  Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si. , 2007, Optics express.

[96]  David A. B. Miller,et al.  Device Requirements for Optical Interconnects to Silicon Chips , 2009, Proceedings of the IEEE.

[97]  N. D. de Rooij,et al.  Cocaine detection by a mid-infrared waveguide integrated with a microfluidic chip. , 2012, Lab on a chip.

[98]  Mitsuru Takenaka,et al.  Novel Ge waveguide platform on Ge-on-insulator wafer for mid-infrared photonic integrated circuits. , 2016, Optics express.

[99]  Soon Fatt Yoon,et al.  The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD – Application to a 200 mm GaAs virtual substrate , 2015 .

[100]  Graham T. Reed,et al.  Silicon Photonics: The State of the Art , 2008 .

[101]  Laurent Vivien,et al.  Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection , 2004 .

[102]  D. Gill,et al.  Optical sensing of biomolecules using microring resonators , 2006, IEEE Journal of Selected Topics in Quantum Electronics.

[103]  M. Morse,et al.  31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate. , 2007, Optics express.

[104]  J. Nakatsuru,et al.  論文紹介 Growth of high quality Ge epitaxial layer on Si(100) substrate using ultra thin Si0.5Ge0.5 buffer , 2005 .

[105]  Qiming Wang,et al.  GeSn p-i-n photodetector for all telecommunication bands detection. , 2011, Optics express.

[106]  Chuan Seng Tan,et al.  Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient , 2015 .

[107]  Jurgen Michel,et al.  Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates , 1991 .

[108]  Yasuhiko Arakawa,et al.  Silicon photonics for next generation system integration platform , 2013, IEEE Communications Magazine.

[109]  Sasan Fathpour,et al.  Emerging heterogeneous integrated photonic platforms on silicon , 2015 .

[110]  Elia Palange,et al.  Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si , 1998 .

[111]  Qianfan Xu,et al.  Silicon microring resonators with 1.5-μm radius , 2008 .

[112]  O. Madelung.  Physics of Group IV Elements and III-V Compounds , 1982 .