Capture time versus barrier thickness in quantum‐well structures measured by infrared photoconductive gain
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Emmanuel Rosencher | Julien Nagle | Y. Cordier | J. Nagle | Y. Cordier | E. Rosencher | P. Bois | F. Luc | Philippe Bois | F. Luc
[1] Hui Chun Liu,et al. Photoconductive gain mechanism of quantum‐well intersubband infrared detectors , 1992 .
[2] V. D. Shadrin,et al. The theory of multiple quantum-well GaAs-AlGaAs infrared detectors , 1992 .
[3] Brum,et al. Resonant carrier capture by semiconductor quantum wells. , 1986, Physical review. B, Condensed matter.
[4] Benoit Deveaud,et al. Carrier capture in quantum wells , 1993 .
[5] L. Levine,et al. In situ scanning‐tunneling‐microscopy studies of current driven mass transport in Ag , 1993 .
[6] E. Rosencher,et al. Determination of electron recombination parameters in GaAs/AlGaAs quantum wells by impedance spectroscopy , 1993 .
[7] E. Rosencher,et al. Intersubband optical transients in multi‐quantum‐well structures , 1993 .
[8] N. Holonyak,et al. Carrier collection in a semiconductor quantum well , 1978 .
[9] E. Rosencher,et al. Injection mechanism at contacts in a quantum‐well intersubband infrared detector , 1992 .
[10] Wolter,et al. Carrier capture into a semiconductor quantum well. , 1993, Physical review. B, Condensed matter.
[11] H. Hirayama,et al. Estimation of carrier capture time of quantum‐well lasers by spontaneous emission spectra , 1992 .
[12] Meier,et al. Optical studies of vertical ambipolar transport and interface recombination velocities in GaAs/Al0.5Ga0.5As double-quantum-well heterostructures. , 1991, Physical review. B, Condensed matter.
[13] C. Bethea,et al. Broadband 8–12 μm high‐sensitivity GaAs quantum well infrared photodetector , 1989 .
[14] Amnon Yariv,et al. Performance limitations of GaAs/AlGaAs infrared superlattices , 1989 .
[15] M. Buchanan,et al. Dark current in quantum well infrared photodetectors , 1993 .
[16] A. S. Grove. Physics and Technology of Semiconductor Devices , 1967 .