Fabrication of Weak C-Axis Preferred AlN Thin Film for Temperature Measurement

A weak C-axis preferred AlN thin film with a lot of defects was fabricated for temperature measurement. It was found that the (002) diffraction peak of the thin film increased monotonously with the increase in annealing temperature and annealing time. This phenomenon is ascribed to the evolution of defects in the lattice of the AlN film. Therefore, the relationship between defects and annealing can be expressed by the offset of (002) diffraction peak, which can be used for temperature measurement. Furthermore, a temperature interpretation algorithm Equation based on the lattice parameter (2θ), annealing temperature and annealing time was established, and a temperature interpretation software was built with MATLAB. Visual temperature interpretation is realized by the software, and the relative error is less than 7%. This study is of great significance for promoting the accurate temperature measurement on the surface of high temperature component.

[1]  Li Yang,et al.  The Research of Temperature Indicating Paints and its Application in Aero-engine Temperature Measurement☆ , 2015 .

[2]  S. Ganapathy,et al.  Identification of sublattice damages in swift heavy ion irradiated N-doped 6H-SiC polytype studied by solid state NMR. , 2011, The journal of physical chemistry. B.

[3]  A. Carbonaro,et al.  Reliability of Body Temperature Measurements Obtained with Contactless Infrared Point Thermometers Commonly Used during the COVID-19 Pandemic , 2021, Sensors.

[4]  R. Yimnirun,et al.  Effects of N2-content on formation behavior in AlN thin films studied by NEXAFS: Theory and experiment , 2020 .

[5]  Shizhong Xu.  Predicted Residual Error Sum of Squares of Mixed Models: An Application for Genomic Prediction , 2017, G3: Genes, Genomes, Genetics.

[6]  H. Chapman,et al.  Radiation damage free ghost diffraction with atomic resolution , 2015, 1511.05068.

[7]  Xiaohui Zhao,et al.  Microstructure Evolution and Thermoelectric Property of Pt-PtRh Thin Film Thermocouples , 2017 .

[8]  Eric Kirchner,et al.  Performance measures of color-difference equations: correlation coefficient versus standardized residual sum of squares , 2011 .

[9]  Mario Manana,et al.  Infrared Temperature Measurement Sensors of Overhead Power Conductors , 2020, Sensors.

[10]  Jiming Liu,et al.  Estimating the sample mean and standard deviation from the sample size, median, range and/or interquartile range , 2014, BMC Medical Research Methodology.

[11]  H. Schielzeth,et al.  The coefficient of determination R2 and intra-class correlation coefficient from generalized linear mixed-effects models revisited and expanded , 2016, bioRxiv.

[12]  Gregory W. Auner,et al.  XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy , 2008 .

[13]  Ulrich Schmid,et al.  c-axis orientation and piezoelectric coefficients of AlN thin films sputter-deposited on titanium bottom electrodes , 2012 .

[14]  D. Zahn,et al.  The Limits of the Post‐Growth Optimization of AlN Thin Films Grown on Si(111) via Magnetron Sputtering , 2019, physica status solidi (b).

[15]  Y. Hayashi,et al.  Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film , 2019, Journal of Crystal Growth.

[16]  Julio Molleda,et al.  Infrared Thermography for Temperature Measurement and Non-Destructive Testing , 2014, Sensors.

[17]  Enqiang Lin,et al.  Grain boundary effects on defect production and mechanical properties of irradiated nanocrystalline SiC , 2012 .

[18]  Xiang Li,et al.  Effects of Eu ions dose and annealing temperature on the structural and optical properties of Eu-implanted AlN thin films , 2019, Superlattices and Microstructures.

[19]  Wei Zhu,et al.  High-Temperature Sensor Based on Neutron-Irradiated 6H-SiC , 2011 .

[20]  Objective Bayesian inference for the intraclass correlation coefficient in linear models , 2018, Statistics & Probability Letters.

[21]  . Ababneha,et al.  c-axis orientation and piezoelectric coefficients of AlN thin films sputter-deposited on titanium bottom electrodes , 2012 .

[22]  T. Kita,et al.  Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN , 2015 .

[23]  Junzhan Zhang,et al.  Structural and Electrical Properties of Flexible ITO/In2O3 Thermocouples on PI Substrates under Tensile Stretching , 2019, ACS Applied Electronic Materials.

[24]  Xingzhong Cao,et al.  Origination and evolution of point defects in AlN film annealed at high temperature , 2021, Journal of Luminescence.

[25]  M. Weyers,et al.  Stabilization of sputtered AlN/sapphire templates during high temperature annealing , 2019, Journal of Crystal Growth.

[26]  Y. Li,et al.  Surface, structural and optical properties of AlN thin films grown on different face sapphire substrates by metalorganic chemical vapor deposition , 2018, Applied Surface Science.

[27]  S. Harada,et al.  Improvement mechanism of sputtered AlN films by high-temperature annealing , 2018, Journal of Crystal Growth.

[28]  Christophe Ley,et al.  Detecting outliers: Do not use standard deviation around the mean, use absolute deviation around the median , 2013 .

[29]  Volker Schöppner,et al.  Effects of AlN and BCN Thin Film Multilayer Design on the Reaction Time of Ni/Ni-20Cr Thin Film Thermocouples on Thermally Sprayed Al2O3 , 2019, Sensors.