Low-voltage operation of metal-ferroelectric-insulator-semiconductor diodes incorporating a ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett film

We report the electrical characteristics of metal-ferroelectric-insulator-semiconductor structures, where the ferroelectric layer is a Langmuir-Blodgett film of a copolymer of 70% vinylidene fluoride and 30% trifluoroethylene. The 36-nm thick copolymer films were deposited on thermally oxidized (10nm SiO2) p-type silicon and covered with a gold gate electrode. Polarization-field hysteresis loops indicate polarization switching in the polymer film. The device capacitance shows hysteresis when cycling the applied voltage between ±3V, exhibiting a zero-bias on/off capacitance ratio of over 3:1 and a symmetric memory window 1V wide, with little evidence of bias that can arise from traps in the oxide. Model calculations are in good agreement with the data and show that film polarization was not saturated. The capacitance hysteresis vanishes above the ferroelectric-paraelectric transition temperature, showing that it is due to polarization hysteresis. The retention time of both the on and off states was approxi...

[1]  Gerwin H. Gelinck,et al.  All-polymer ferroelectric transistors , 2005 .

[2]  J. Nunzi,et al.  Improved performance of pentacene field-effect transistors using a polyimide gate dielectric layer , 2005 .

[3]  Gerwin H. Gelinck,et al.  High-performance solution-processed polymer ferroelectric field-effect transistors , 2005 .

[4]  M. Grell,et al.  Memory performance and retention of an all-organic ferroelectric-like memory transistor , 2005, IEEE Electron Device Letters.

[5]  S. Desu,et al.  Electrical properties of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application , 2004 .

[6]  S. Sakai,et al.  Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance , 2004, IEEE Electron Device Letters.

[7]  V. Fridkin,et al.  Determination of the optical dispersion in ferroelectric vinylidene fluoride (70%)/trifluoroethylene (30%) copolymer Langmuir-Blodgett films , 2004 .

[8]  A. Schrott,et al.  Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel , 2003 .

[9]  Stephen Ducharme,et al.  Nonvolatile memory element based on a ferroelectric polymer Langmuir–Blodgett film , 2003 .

[10]  Hari Singh Nalwa,et al.  Ferroelectric and dielectric thin films , 2002 .

[11]  V. Fridkin,et al.  Ferroelectric polymer langmuir-blodgett films , 2002 .

[12]  A BSIM3v3 and DFIM Based Ferroelectric Field Effect Transistor Model , 2000 .

[13]  D. Shen,et al.  Carrier tunneling in a novel asymmetric quantum well structure , 1999 .

[14]  Stephen Ducharme,et al.  Two-dimensional ferroelectric films , 1998, Nature.

[15]  Hari Singh Nalwa,et al.  Ferroelectric Polymers : Chemistry: Physics, and Applications , 1995 .

[16]  Paul J. McWhorter,et al.  Physics of the ferroelectric nonvolatile memory field effect transistor , 1992 .

[17]  T. Furukawa.  Ferroelectric properties of vinylidene fluoride copolymers , 1989 .

[18]  N. Yamauchi.  A Metal-Insulator-Semiconductor (MIS) Device Using a Ferroelectric Polymer Thin Film in the Gate Insulator , 1986 .

[19]  Rustum Roy,et al.  Materials Research Society , 1984 .

[20]  A. J. Lovinger.  Ferroelectric Polymers , 1983, Science.

[21]  J. L. Moll,et al.  A new solid state memory resistor , 1963 .