Phase Change Memory A comprehensive and thorough review of PCM technologies, including a discussion of material and device issues, is provided in this paper.

In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal proper- ties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling prop- erties of PCM are illustrated with recent experimental results using special device test structures and novel material synthe- sis. Factors affecting the reliability of PCM are discussed.

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