X-Band GaN-HEMT LNA performance versus robustness trade-off

In this paper design, fabrication and test of three X-Band robust LNA MMICs in microstrip GaN technology are presented to better understand the key aspects of performance versus robustness trade-off for said components. In particular LNAs with different number of amplification stages, input device gate peripheries and topologies have been evaluated with the objective of achieving in the 8–11 GHz frequency range a NF better than 2.5dB, associated gain of circa 20 dB and overdrive power survivability better than 38 dBm.

[1]  A. Kurdoghlian,et al.  GaN MMIC technology for microwave and millimeter-wave applications , 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..

[2]  Umesh K. Mishra,et al.  High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs , 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

[3]  M. van Heijningen,et al.  X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling , 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.

[4]  G. Tränkle,et al.  Analysis of the Survivability of GaN Low-Noise Amplifiers , 2007, IEEE Transactions on Microwave Theory and Techniques.

[5]  Y. Mancuso,et al.  Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: application to X-band low noise amplifiers , 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

[6]  W. Heinrich,et al.  A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier , 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

[8]  U. Mishra,et al.  High Linearity, Robust, AIGaN-GaN HEMTs for LNA & Receiver ICs , 2002 .

[9]  T. Lee,et al.  Robust Broadband (4 GHz - 16 GHz) GaN MMIC LNA , 2007, 2007 IEEE Compound Semiconductor Integrated Circuits Symposium.