论文信息 - Selective MOVPE growth of (Al)GaAs using DMGaCl and DMAlCl

Selective MOVPE growth of (Al)GaAs using DMGaCl and DMAlCl

We report on the selective growth using the precursors dimethylgallium-chloride and dimethylaluminumchloride. They were selected to obtain good selectivity together with high growth rates, without using elevated source temperatures. The vapour pressures of these precursors were determined. The need for high growth temperatures was demonstrated. Growth rates of more than 5 /spl mu/m/h were achieved. An influence of the stripe orientation on the morphology was observed for the growth of AlGaAs.

K. Heime | B. Gérard | C. Giesen | M. Philippens | S. Rushworth

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