论文信息 - Interaction of electrons with interface phonons in GaAs/AlAs and GaAs/AlGaAs heterostructures

Interaction of electrons with interface phonons in GaAs/AlAs and GaAs/AlGaAs heterostructures

The interaction of electrons with interface phonons is predicted to be of major importance in narrow quantum wells. Time-integrated Raman measurements of non-equilibrium phonons in GaAs/AlAs structures show strong coupling to AlAs interface modes, in good agreement with theoretical predictions based on a microscopic phonon model. Monte Carlo simulations of time-resolved Raman measurements of interface phonons in GaAs/AlGaAs structures provide further confirmation of this result.

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