Laser ablated nanostructured zinc sulphide thin films for optoelectronics device applications

ZnS thin films are prepared by pulsed laser deposition and the effect of annealing temperature on the structural and optical properties of ZnS films is investigated systematically using techniques like X-ray diffraction (XRD), Atomic force microscopy (AFM), UV-VIS spectroscopy and Photoluminescence spectroscopy (PL). The XRD pattern of the film annealed at 600 °C show a less intense XRD peak of hexagonal ZnO. In the photoluminescence spectra, an orange emission is observed for the films with 325 nm excitation.

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