Silicon oxynitride-based integrated optical switch

In this work we describe the fabrication and characterization of MOEMS-based integrated optical switches with improved ON/OFF performance. These structures consist of silicon oxynitride-based optical waveguides, through which a light beam of 633-nm can be conducted, and mobile thermo-electro actuated cantilevers, which form part of the waveguide and can work as ON-OFF switches for the laser. These switches allow the laser light to pass or block the laser light when activated electrically. The cantilevers are fabricated by freeing regions of the waveguide, which is done by front side micromachining the silicon wafer used as substrate. Also, they are actuated electrically through the heating of a metallic resistance positioned in the device, where the applied current heats the cantilevers and, due to the difference in thermal expansion coefficients of the constituent materials, it is possible to produce a controlled motion proportional to the heating current. Therefore, the switches can be electrically polarized in on/off cycles allowing or blocking the light through the waveguide, similar to logic "1's" and "0's".

[1]  M. I. Alayo,et al.  PECVD-SiOxNy films for large area self-sustained grids applications , 2002 .

[2]  Pasqualina M. Sarro,et al.  Low-stress PECVD SiC thin films for IC-compatible microstructures , 1998 .

[3]  T. Skotnicki,et al.  An Evaluation of the CMOS Technology Roadmap From the Point of View of Variability, Interconnects, and Power Dissipation , 2008, IEEE Transactions on Electron Devices.

[4]  James F. Scott,et al.  Dependence of breakdown field on dielectric (interelectrode) thickness in base-metal electroded multilayer capacitors , 2007 .

[5]  Andrew A. Goldenberg,et al.  MEMS optical switches , 2001, IEEE Commun. Mag..

[6]  H. Melchior,et al.  Simultaneous all-optical add and drop multiplexing of 40-Gbit/s OTDM signals using monolithically integrated Mach-Zehnder interferometer , 1998 .

[7]  M. Modreanu,et al.  Investigation on optical properties of CVD films used in MOEMS applications , 2001 .

[8]  M. Carreño,et al.  Membranes of SiOxNy with 3D topography formed by PECVD for MEMS applications , 2004 .

[9]  R. Wallace,et al.  High-κ gate dielectrics: Current status and materials properties considerations , 2001 .

[10]  I. Pereyra,et al.  Wide gap a-Si1−xCx:H thin films obtained under starving plasma deposition conditions , 1996 .

[11]  M. Wu.  A low voltage micromachined optical switch by stress-induced bending , 1999, Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291).

[12]  Jon-Paul Maria,et al.  Alternative dielectrics to silicon dioxide for memory and logic devices , 2000, Nature.

[13]  S A Collins,et al.  Optical logic gates using liquid crystal light valve: implementation and application example. , 1981, Applied optics.

[14]  M. I. Alayo,et al.  MEMS-based incandescent microlamps for integrated optics applications , 2008 .

[15]  A. R. Oliveira,et al.  Post thermal annealing crystallization and reactive ion etching of SiC films produced by PECVD , 2006 .

[16]  Clinton Randy Giles,et al.  A silicon MEMS optical switch attenuator and its use in lightwave subsystems , 1999 .

[17]  Ashok V. Krishnamoorthy,et al.  Optoelectronic-VLSI: photonics integrated with VLSI circuits , 1998 .

[18]  Anthony L. Lentine,et al.  Free-space digital optical systems , 1994 .

[19]  M. I. Alayo,et al.  Integration of optical waveguides with micro-incandescent light , 2008 .

[20]  G. Rehder,et al.  Thermally actuated a-SiC:H MEMS fabricated by a PECVD process , 2006 .

[21]  M. I. Alayo,et al.  Fabrication of PECVD-silicon oxynitride-based optical waveguides , 2004 .

[22]  I. Pereyra,et al.  Local bonding in PECVD-SiOxNy films , 2006 .

[23]  G. Theophilopoulos,et al.  40 GHz all-optical XOR with UNI gate , 2001, OFC 2001. Optical Fiber Communication Conference and Exhibit. Technical Digest Postconference Edition (IEEE Cat. 01CH37171).

[24]  I. Pereyra,et al.  Low temperature plasma enhanced chemical vapour deposition boron nitride , 1997 .

[25]  M. I. Alayo,et al.  On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films , 2002 .

[26]  M. Desmulliez.  Optoelectronics-VLSI system integration Technological challenges , 2000 .

[27]  G. Rehder,et al.  PECVD a-Sic:H Young’s modulus obtained by MEMS resonant frequency , 2008 .

[28]  G. Agrawal,et al.  Robust optical control of an optical-amplifier-based flip-flop. , 2000, Optics express.

[29]  I. Pereyra,et al.  Improved effective charge density in MOS capacitors with PECVD SiOxNy dielectric layer obtained at low RF power , 2008 .

[30]  H. K. Lee,et al.  Pulse-amplitude-equalized output from a rational harmonic mode-locked fiber laser. , 1998, Optics letters.

[31]  Y. Ichioka,et al.  Optical parallel logic gates using a shadow-casting system for optical digital computing , 1984, Proceedings of the IEEE.

[32]  A. Kloch,et al.  Demonstration of 20 Gbit/s all-optical logic XOR in integrated SOA-based interferometric wavelength converter , 2000 .