论文信息 - Measurement of the X-Ray Sensitivity of Silicon Diodes in the Energy Region 1.8 to 5.0 Kev - 字舞流文

Measurement of the X-Ray Sensitivity of Silicon Diodes in the Energy Region 1.8 to 5.0 Kev

[1] P. B. Lyons,et al. A total absorption ionization chamber for 1.5–10 keV X rays , 1971 .

[2] B. Henke. Microanalysis with Ultrasoft X-Radiations* , 1961 .