Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge
暂无分享,去创建一个
[1] V. Emtsev,et al. Radiation-produced defects in germanium: Experimental data and models of defects , 2017 .
[2] V. V. Emtsev,et al. Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons , 2016 .
[3] I. Pintilie,et al. Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy , 2015 .
[4] V. V. Emtsev,et al. Vacancy-donor pairs and their formation in irradiated n-Si , 2014 .
[5] K. Nordlund,et al. Threshold defect production in silicon determined by density functional theory molecular dynamics simulations , 2008 .
[6] S. Öberg,et al. Self-interstitials and Frenkel pairs in electron-irradiated germanium , 2007 .
[7] R. Jones,et al. Self-interstitial in germanium. , 2007, Physical review letters.
[8] V. Torres,et al. Ab initio modeling of defect levels in Ge clusters and supercells , 2006 .
[9] V. V. Emtsev,et al. An Effect of the Beam Current and Energy of Fast Electrons on the Production Rates of A-Centres and Divacancies in n-Si , 1992 .
[10] V. V. Emtsev,et al. Frenkel pairs in silicon and germanium , 1989 .
[11] G. D. Watkins,et al. PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON , 1965 .
[12] P. Hemment,et al. Study of the Anisotropy of Radiation Damage Rates in n‐Type Silicon , 1969 .
[13] J. S. Blakemore. Semiconductor Statistics , 1962 .